ATEK MIDAS — RF & Microwave IC Design

ATEK177P4

2 - 20 GHz High OIP2 LNA

ReleasedProduct Datasheet

Key Features

  • Frequency Range2 - 20 GHz
  • OIP2+45 dBm
  • OIP3+32 dBm
  • P1dB+20 dBm
  • Gain25 dB
  • Noise Figure2.3 dB
  • VD BIAS+4 V @ 200mA
  • Compact Size4x4 mm

Applications

  • Wideband Receivers, SDRs
  • Microwave Radio
  • Test and Measurement
  • EW / ECM / C-UAS
  • Military and Commercial Radar

Architecture

ATEK177P4 Block Diagram

ATEK177P4 Block Diagram

ATEK177P4 is a Wideband GaAs MMIC High Output IP2 Low Noise Amplifier (LNA) operating from 2 to 20 GHz.

The ATEK177P4 LNA provides a high gain of 25dB with a corresponding low noise figure of 2.5dB and a high OIP3 of +32dBm. The LNA has a high 2nd order intercept of +45dBm that results in 40dBc suppression of the second harmonic with an operating power of +6dBm output power. This allows users to easily realize a very high dynamic range for wideband receiver frontends.

The ATEK177P4 LNA is housed in a compact 4x4 mm SMD package with input and output matched to 50 ohms internally.

Evaluation Board, bare die, custom package, and module options are available upon request.

Technical Specifications

ParameterConditionMinTypicalMaxUnit
Operating Temperature220GHz
Frequency Range220GHz
Gain2 GHz24.5dB
8 GHz26dB
12 GHz26dB
20 GHz25dB
IP22 GHz42dBm
8 GHz51dBm
12 GHz43dBm
18 GHz53dBm
Noise Figure2 GHz3.3dB
8 GHz2.3dB
12 GHz2.3dB
20 GHz2.6dB
Isolation2 GHz57dB
8 GHz66dB
12 GHz68dB
20 GHz52dB
Input Return Loss-12dB
Output Return Loss-10dB
Output IP332dBm
Output P1dB20dBm
Psat21dBm
DC Supply Voltage (Vdd1 = Vdd2)4V
DC Supply Current (Idd1 + Idd2)200mA
DC Gate Voltage (Vgg)4V
DC Gate Current (Igg)1mA
Operating Temperature-4085°C

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